QS5U23TR, US $ .19-.4 , ROHM Semiconductor, QS5U23TR DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00151109 Detail

QS5U23TR: MOSFET P-CH 20V 1.5A

QS5U23TR Data Sheet

US $ .19~.4 / Piece | Get Latest Price

Part Number:: QS5U23TR
Mfg:: ROHM Semiconductor
Supply Ability:: 5000

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25~100
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Upload time: 2024/12/22

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Recent History
What is this?

QS5U12 evaluate
PinoutDescriptionFeatures of the QS5U12 are:(1)the QS5U12 combines Nch MOSFET with a schottky barr...
QS5U12TR evaluate
US $.12 - .12 / Piece

MOSFET N-CH 30V 2A TSMT5
QS5U16TR evaluate
US $.14 - .3 / Piece

MOSFET N-CH 30V 2A

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 20 V
Gate-Source Breakdown Voltage :	+/- 12 V	Continuous Drain Current :	- 1.5 A
Resistance Drain-Source RDS (on) :	200 mOhms at 4.5 V	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TSMT-5	Packaging :	Reel

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : - 1.5 A
Resistance Drain-Source RDS (on) : 200 mOhms at 4.5 V
Package / Case : TSMT-5

Parameters:

Technical/Catalog Information	QS5U23TR
Vendor	Rohm Semiconductor(VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.5A
Rds On (Max) @ Id, Vgs	200 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds	325pF @ 10V
Power - Max	900mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	4.2nC @ 4.5V
Package / Case	TSMT5
FET Feature	Diode (Isolated)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	QS5U23TR QS5U23TR QS5U23CT ND QS5U23CTND QS5U23CT

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QS5U23TR

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