QS5U23 Selling Leads, Price trend, QS5U23 DataSheet download, circuit diagram from SeekIC.com

Features: · The QS5U23 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package.· Pch MOSSFET have a low on-state resistance with a fast switching.· Pch MOSFET is reacted a low voltage drive(2.5V)· The independently connected Schottky barrier diode have a low forward voltage.App...

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SeekIC No. : 004468540 Detail

QS5U23: Features: · The QS5U23 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package.· Pch MOSSFET have a low on-state resistance with a fast switching.· Pch MOSFET is reacted a low vo...

QS5U23 Data Sheet

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Part Number:: QS5U23
Supply Ability:: 5000

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Qty
1~5000

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Negotiable

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Upload time: 2024/11/21

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Product Details

Description

Features:

· The QS5U23 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package.
· Pch MOSSFET have a low on-state resistance with a fast switching.
· Pch MOSFET is reacted a low voltage drive(2.5V)
· The independently connected Schottky barrier diode have a low forward voltage.

Application

Load switch , DC/DC conversion

Specifications

< MOSFET >

Parameter		Symbol	Limits	Unit
Drain−source voltage		V_DSS	-12	V
Gate−source voltage		V_GSS	±12	V
Drain current	Continuous	I_D	±1.5	A
Drain current	Pulsed	I_DP	±6.0	A PW10 S,Duty cycle 1%
Source current (Body diode)	Continuous	I_S	-0.75	A
Source current (Body diode)	Pulsed	I_SP	-0.3	A PW10 S,Duty cycle 1%
Channel temperature		T_ch	150

< Di >

Repetitive peak reverse voltage	V_RM	30	V
Reverse voltage	V_R	20	V
Forward current	I_F	0.5	A
Forward current surge peak	I_FSM	20	A 60Hz / 1CYC
Junction temperature	T_j	125

< MOSFET AND Di >

Total power dissipation	PD	1.0	W / TOTAL MOUNTED ON A CERAMIC BOARD
Range of strage temperature	Tstg	−40∼125

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QS5U23

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