MOSFET N-CH 30V 2A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | 12 V | Continuous Drain Current : | 2 A | ||
Resistance Drain-Source RDS (on) : | 100 mOhms at 4.5 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TSMT-5 | Packaging : | Reel |
Technical/Catalog Information | QS5U17TR |
Vendor | Rohm Semiconductor(VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 2A |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 2A, 4.5V |
Input Capacitance (Ciss) @ Vds | 175pF @ 10V |
Power - Max | 900mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 3.9nC @ 4.5V |
Package / Case | TSMT5 |
FET Feature | Diode (Isolated) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | QS5U17TR QS5U17TR QS5U17CT ND QS5U17CTND QS5U17CT |