PZT751T1G

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Package / Case : SOT-223
Maximum DC Collector Current : 2 A
Configuration : Single Dual Collector
DC Collector/Base Gain hfe Min : 75 at 50 mA at 2 V
Maximum Operating Frequency : 75 MHz (Min)


Features:

• High Current: 2.0 A
• The SOT−223 Package can be soldered using wave or reflow.
• SOT−223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die
• NPN Complement is PZT651T1
• Pb−Free Package is Available

Specifications

Rating	Symbol	Value	Unit
Collector-emitter voltage	VCE0	60	Vdc
Collector-base voltage	VCB0	80	Vdc
Emitter-base voltage	VEB0	5.0	Vdc
Collector current	IC	2.0	Adc
Total power dissipation @ TA = 124(1) Derate above 25	PD	0.8 6.4	W mW/
Storage temperature range	Tstg	65 to 150
Junction temperature	Tj	150

Description

This PNP Silicon Epitaxial transistor PZT751T1G is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

Parameters:

Technical/Catalog Information	PZT751T1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	2A
Power - Max	800mW
DC Current Gain (hFE) (Min) @ Ic, Vce	75 @ 50mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 200mA, 2A
Frequency - Transition	75MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PZT751T1G PZT751T1G PZT751T1GOSTR ND PZT751T1GOSTRND PZT751T1GOSTR