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PZT751T1D

Features: • High Current: 2.0 Amp• The SOT223 Package can be soldered using wave or reflow.• SOT223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, ...

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SeekIC No. : 004467537 Detail

PZT751T1D: Features: • High Current: 2.0 Amp• The SOT223 Package can be soldered using wave or reflow.• SOT223 package ensures level mounting, resulting in improved thermal conduction, and al...

PZT751T1D Data Sheet

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Part Number:
PZT751T1D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• High Current: 2.0 Amp
• The SOT223 Package can be soldered using wave or reflow.
• SOT223 package ensures level mounting, resulting in improved thermal
  conduction, and allows visual inspection of soldered joints. The formed
  leads absorb thermal stress during soldering, eliminating the possibility of
  damage to the die
• Available in 12 mm Tape and Reel
  Use PZT751T1 to order the 7 inch/1000 unit reel.
  Use PZT751T3 to order the 13 inch/4000 unit reel.
• NPN Complement is PZT651T1


Specifications

Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 60 Vdc
CollectorBase Voltage VCBO 80 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collector Current IC 2.0 Adc
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C		 PD 0.8
6.4		 Watts
mW/°C
Storage Temperature Range Tstg 65 to 150 °C
Junction Temperature TJ 150 °C



Description

This PNP Silicon Epitaxial transistor PZT751T1D is designed for use in industrial and consumer applications. The device is housed in the SOT223 package which is designed for medium power surface mount applications.




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