PZT751T1

Transistors Bipolar (BJT) 2A 80V PNP

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SeekIC No. : 00214850 Detail

PZT751T1: Transistors Bipolar (BJT) 2A 80V PNP

floor Price/Ceiling Price

Part Number:
PZT751T1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 75 at 50 mA at 2 V Configuration : Single Dual Collector
Maximum Operating Frequency : 75 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-223
Packaging : Reel    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Package / Case : SOT-223
Maximum DC Collector Current : 2 A
Configuration : Single Dual Collector
DC Collector/Base Gain hfe Min : 75 at 50 mA at 2 V
Maximum Operating Frequency : 75 MHz (Min)


Features:

· High Current: 2.0 Amp
· The SOT-C223 Package can be soldered using wave or reflow
· SOT-C223 package ensures level mounting, resulting in improved therma conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die
· Available in 12 mm Tape and Reel
    Use PZT751T1 to order the 7 inch/1000 unit reel.
    Use PZT751T3 to order the 13 inch/4000 unit reel.
· NPN Complement is PZT651T1




Specifications

Rating Symbol Value Unit
Collector-emitter voltage VCE0 60 Vdc
Collector-base voltage VCB0 80 Vdc
Emitter-base voltage VEB0 5.0 Vdc
Collector current IC 2.0 Adc
Total power dissipation @ TA = 124 Derate above 25 PD 0.8
6.4
Watts
mW/
Storage temperature range Tstg 65 to 150
Junction temperature Tj 150



Description

This PNP Silicon Epitaxial transistor PZT751T1 is designed for use in industrial and consumer applications. The device is housed in the SOT¤C223 package which is designed fo medium power surface mount applications.




Parameters:

Technical/Catalog InformationPZT751T1
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)2A
Power - Max800mW
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 50mA, 2V
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
Frequency - Transition75MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
PackagingDigi-Reel?
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names PZT751T1
PZT751T1
PZT751T1OSDKR ND
PZT751T1OSDKRND
PZT751T1OSDKR



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