Features: • INTERNALLY MATCHED• Performance at 894 MHz, 28 Volts - Output Power = 125 Watts - Power Gain = 14 dB Typical - Efficiency = 53% Typical• Full Gold Metallization• Excellent Thermal Stability• 100% Lot TraceabilitySpecifications Parameter Symbol V...
PTF 10195: Features: • INTERNALLY MATCHED• Performance at 894 MHz, 28 Volts - Output Power = 125 Watts - Power Gain = 14 dB Typical - Efficiency = 53% Typical• Full Gold Metallization• ...
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Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage (1) |
VDSS |
65 |
Vdc |
Gate-Source Voltage (1) |
VGS |
±20 |
Vdc |
Operating Junction Temperature |
TJ |
200 |
°C |
Total Device Dissipation Above 25°C derate by |
PD |
266 1.52 |
Watts W/°C |
Storage Temperature Range |
TSTG |
40 to +150 |
°C |
Thermal Resistance (TCASE = 70°C) |
RqJC |
.66 |
°C/W |
The PTF 10195 is an internally matched 125watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This PTF 10195 operates at 53% efficiency with 13 dB of gain minimum. Full gold metallization ensures excellent device lifetime and reliability.