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PTF 10193

Features: • INTERNALLY MATCHED• Performance at 960 MHz, 26 Volts - Output Power = 12 Watts - Efficiency = 60% Typ - Power Gain = 18 dB Typ• Full Gold Metallization• Silicon Nitride Passivated• Surface Mountable• Available in Tape and Reel• 100% Lot Traceab...

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SeekIC No. : 004466887 Detail

PTF 10193: Features: • INTERNALLY MATCHED• Performance at 960 MHz, 26 Volts - Output Power = 12 Watts - Efficiency = 60% Typ - Power Gain = 18 dB Typ• Full Gold Metallization• Silicon N...

PTF 10193 Data Sheet

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Part Number:
PTF 10193
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• INTERNALLY MATCHED
• Performance at 960 MHz, 26 Volts
   - Output Power = 12 Watts
   - Efficiency = 60% Typ
   - Power Gain = 18 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Surface Mountable
• Available in Tape and Reel
• 100% Lot Traceability


Specifications

Parameter Symbol Value Unit
Drain-Source Voltage (1) VDSS 65 Vdc
Gate-Source Voltage (1) VGS ±20 Vdc
Operating Junction Temperature TJ 200 °C

Total Device Dissipation

Above 25°C derate by

PD

58

0.33

Watts

W/°C

Storage Temperature Range TSTG 40 to +150 °C
Thermal Resistance (TCASE = 70°C) RqJC 3.0 °C/W



Description

The PTF 10193 is an internally matched, 12watt GOLDMOS FET intended for GSM, CDMA and TDMA amplifier applications from 860 to 960 MHz. This PTF 10193 operates at 60% efficiency with 18 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.




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