Features: • INTERNALLY MATCHED• Performance at 894 MHz, 28 Volts - Output Power = 165 Watts - Power Gain = 16.0 dB Typ - Drain Efficiency = 50% Typ• Full Gold Metallization• Silicon Nitride Passivated• Back Side Common Source• 100% Lot TraceabilitySpecifications...
PTF 10161: Features: • INTERNALLY MATCHED• Performance at 894 MHz, 28 Volts - Output Power = 165 Watts - Power Gain = 16.0 dB Typ - Drain Efficiency = 50% Typ• Full Gold Metallization• ...
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Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage (1) |
VDSS |
65 |
Vdc |
Gate-Source Voltage (1) |
VGS |
±20 |
Vdc |
Operating Junction Temperature |
TJ |
200 |
°C |
Total Device Dissipation Above 25°C derate by |
PD |
500 2.85 |
Watts W/°C |
Storage Temperature Range |
TSTG |
40 to +150 |
°C |
Thermal Resistance (TCASE = 70°C) |
RqJC |
0.35 |
°C/W |
The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. PTF 10161 typically operates with 50% efficiency and 16 db of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.