PTF 10160 Selling Leads, Price trend, PTF 10160 DataSheet download, circuit diagram from SeekIC.com

Features: • INTERNALLY MATCHED• Performance at 960 MHz, 26 Volts - Output Power = 85 Watts - Power Gain = 16 dB Typ - Efficiency = 53% Typ• Full Gold Metallization• Silicon Nitride Passivated• Excellent Thermal Stability• 100% Lot TraceabilitySpecifications ...

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PTF 10160: Features: • INTERNALLY MATCHED• Performance at 960 MHz, 26 Volts - Output Power = 85 Watts - Power Gain = 16 dB Typ - Efficiency = 53% Typ• Full Gold Metallization• Silicon N...

PTF 10160 Data Sheet

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Part Number:: PTF 10160
Supply Ability:: 5000

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Upload time: 2024/11/25

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Product Details

Description

Features:

• INTERNALLY MATCHED
• Performance at 960 MHz, 26 Volts
- Output Power = 85 Watts
- Power Gain = 16 dB Typ
- Efficiency = 53% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• 100% Lot Traceability

Specifications

Parameter	Symbol	Value	Unit
Drain-Source Voltage	V_DSS	65	V_dc
Gate-Source Voltage	V_GS	±20	V_dc
Operating Junction Temperature	T_J	200	°C
Total Device Dissipation Above 25°C derate by	P_D	205 1.18	Watts W/°C
Storage Temperature Range	T_STG	-40 to 150	°C
Thermal Resistance (T_CASE = 70°C)	R_qJC	0.85	°C/W

Description

The PTF 10160 is an internally matched 85watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. PTF 10160 operates with 53% efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability.

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PTF 10160

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