Features: • INTERNALLY MATCHED• Guaranteed Performance at 1.93, 1.99 GHz, 28 V - Output Power = 85 Watts Min - Power Gain = 11 dB Typ• Full Gold Metallization• Silicon Nitride Passivated• Back Side Common Source• Excellent Thermal Stability• 100% Lot Trace...
PTF 10154: Features: • INTERNALLY MATCHED• Guaranteed Performance at 1.93, 1.99 GHz, 28 V - Output Power = 85 Watts Min - Power Gain = 11 dB Typ• Full Gold Metallization• Silicon Nitrid...
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Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage |
VDSS |
65 |
Vdc |
Gate-Source Voltage |
VGS |
±20 |
Vdc |
Operating Junction Temperature |
TJ |
200 |
°C |
Total Device Dissipation Above 25°C derate by |
PD |
365 2.08 |
Watts W/°C |
Storage Temperature Range |
TSTG |
-40 to 150 |
°C |
Thermal Resistance (TCASE = 70°C) |
RqJC |
0.48 |
°C/W |
The PTF 10154 is an internally matched 85watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This PTF 10154 operates at 43% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.