PTF 10154

Features: • INTERNALLY MATCHED• Guaranteed Performance at 1.93, 1.99 GHz, 28 V - Output Power = 85 Watts Min - Power Gain = 11 dB Typ• Full Gold Metallization• Silicon Nitride Passivated• Back Side Common Source• Excellent Thermal Stability• 100% Lot Trace...

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PTF 10154 Picture
SeekIC No. : 004466883 Detail

PTF 10154: Features: • INTERNALLY MATCHED• Guaranteed Performance at 1.93, 1.99 GHz, 28 V - Output Power = 85 Watts Min - Power Gain = 11 dB Typ• Full Gold Metallization• Silicon Nitrid...

floor Price/Ceiling Price

Part Number:
PTF 10154
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

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Product Details

Description



Features:

• INTERNALLY MATCHED
• Guaranteed Performance at 1.93, 1.99 GHz,
  28 V
  - Output Power = 85 Watts Min
  - Power Gain = 11 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability



Specifications

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

65

Vdc

Gate-Source Voltage

VGS

±20

Vdc

Operating Junction Temperature

TJ

200

°C

Total Device Dissipation

Above 25°C derate by

PD

365

2.08

Watts

W/°C

Storage Temperature Range

TSTG

-40 to 150

°C

Thermal Resistance (TCASE = 70°C)

RqJC

0.48

°C/W




Description

The PTF 10154 is an internally matched 85watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This PTF 10154 operates at 43% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.




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