Features: • INTERNALLY MATCHED• Guaranteed Performance at 1805, 1843, 1880 MHz, 28 V - Output Power = 60 Watts Min - Power Gain = 11.5 dB Min• Full Gold Metallization• Silicon Nitride Passivated• Back Side Common Source• Excellent Thermal Stability• 100% L...
PTF 10153: Features: • INTERNALLY MATCHED• Guaranteed Performance at 1805, 1843, 1880 MHz, 28 V - Output Power = 60 Watts Min - Power Gain = 11.5 dB Min• Full Gold Metallization• Silico...
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Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage |
VDSS |
65 |
Vdc |
Gate-Source Voltage |
VGS |
±20 |
Vdc |
Operating Junction Temperature |
TJ |
200 |
°C |
Total Device Dissipation Above 25°C derate by |
PD |
237 1.35 |
Watts W/°C |
Storage Temperature Range |
TSTG |
40 to +150 |
°C |
Thermal Resistance (TCASE = 70°C) |
RqJC |
0.74 |
°C/W |
The PTF 10153 is an internally matched 60watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. PTF 10153 operates with 40% efficiency and 11.5 dB minimum gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.