PTF 10149

Features: • INTERNALLY MATCHED• Performance at 960 MHz, 26 Volts - Output Power = 70 Watts - Power Gain = 16.0 dB Typ - Efficiency = 50% Typ• Full Gold Metallization• Silicon Nitride Passivated• Excellent Thermal Stability• 100% Lot TraceabilitySpecifications ...

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PTF 10149 Picture
SeekIC No. : 004466881 Detail

PTF 10149: Features: • INTERNALLY MATCHED• Performance at 960 MHz, 26 Volts - Output Power = 70 Watts - Power Gain = 16.0 dB Typ - Efficiency = 50% Typ• Full Gold Metallization• Silicon...

floor Price/Ceiling Price

Part Number:
PTF 10149
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

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Product Details

Description



Features:

• INTERNALLY MATCHED
• Performance at 960 MHz, 26 Volts
  - Output Power = 70 Watts
  - Power Gain = 16.0 dB Typ
  - Efficiency = 50% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• 100% Lot Traceability



Specifications

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

65

Vdc

Gate-Source Voltage

VGS

±20

Vdc

Operating Junction Temperature

TJ

200

°C

Total Device Dissipation

Above 25°C derate by

PD

197

1.12

Watts

W/°C

Storage Temperature Range

TSTG

40 to +150

°C

Thermal Resistance (TCASE = 70°C)

RqJC

0.89

°C/W




Description

The PTF 10149 is an internally matched 70watt GOLDMOS FET intended for cellular and GSM amplifier applications from 921 to 960 MHz. PTF 10149 operates with 50% efficiency and 16 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.




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