Features: • Performance at 960 MHz, 28 Volts - Output Power = 60 Watts Min - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ• Full Gold Metallization• Silicon Nitride Passivated• Excellent Thermal Stability• Back Side Common Source• 100% Lot Traceability• ...
PTF 10139: Features: • Performance at 960 MHz, 28 Volts - Output Power = 60 Watts Min - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ• Full Gold Metallization• Silicon Nitride Passivated...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Symbol | Value | Unit |
Drain-Source Voltage | VDSS | 65 | Vdc |
Gate-Source Voltage | VGS | ±20 | Vdc |
Drain Current - Continuous | ID | 7 | Adc |
Operating Junction Temperature | TJ | 200 | °C |
Total Device Dissipation Above 25°C derate by |
PD |
194 1.11 |
Watts W/°C |
Storage Temperature Range | TSTG | -65 to 150 | °C |
Thermal Resistance (TCASE = 70°C) | RqJC | 0.9 | °C/W |
The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60watt device PTF 10139 operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.