Features: • Performance at 960 MHz, 28 Volts - Output Power = 12 Watts - Efficiency = 60% Typ - Power Gain = 18 dB Typ• Full Gold Metallization• Silicon Nitride Passivated• Surface Mountable• Available in Tape and Reel• 100% Lot TraceabilitySpecifications P...
PTF 10137: Features: • Performance at 960 MHz, 28 Volts - Output Power = 12 Watts - Efficiency = 60% Typ - Power Gain = 18 dB Typ• Full Gold Metallization• Silicon Nitride Passivated• S...
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Parameter | Symbol | Value | Unit |
Drain-Source Voltage (1) | VDSS | 65 | Vdc |
Gate-Source Voltage (1) | VGS | ±20 | Vdc |
Operating Junction Temperature | TJ | 200 | °C |
Total Device Dissipation Above 25°C derate by |
PD |
58 0.33 |
Watts W/°C |
Storage Temperature Range | TSTG | 40 to +150 | °C |
Thermal Resistance (TCASE = 70°C) | RqJC | 3.0 | °C/W |
The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. PTF 10137 operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.