Features: Performance at 960 MHz, 28 Volts - Output Power = 6 Watts - Efficiency = 57% Typ - Power Gain = 19 dB Typ Full Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel 100% Lot TraceabilitySpecifications Parameter Symbol Value Unit Dra...
PTF 10136: Features: Performance at 960 MHz, 28 Volts - Output Power = 6 Watts - Efficiency = 57% Typ - Power Gain = 19 dB Typ Full Gold Metallization Silicon Nitride Passivated Surface Mountable Available in ...
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Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage (1) |
VDSS |
65 |
Vdc |
Gate-Source Voltage (1) |
VGS |
±20 |
Vdc |
Operating Junction Temperature |
TJ |
200 |
°C |
Total Device Dissipation Above 25°C derate by |
PD |
39 0.22 |
Watts W/°C |
Storage Temperature Range |
TSTG |
65 to +150 |
°C |
Thermal Resistance (TCASE = 70°C) |
RqJC |
4.5 |
°C/W |
The PTF 10136 is a 6watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. PTF 10136 operates at 57% efficiency with 19 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.