PTF 10135 Selling Leads, Price trend, PTF 10135 DataSheet download, circuit diagram from SeekIC.com

Features: Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal StabilitySpecifications Parameter Symbol Value Unit Drain-Source Voltage (1) VDSS ...

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PTF 10135: Features: Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stabi...

PTF 10135 Data Sheet

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Part Number:: PTF 10135
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/25

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Product Details

Description

Features:

Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 5 Watts Min
- Power Gain = 11 dB Min
Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability

Specifications

Parameter	Symbol	Value	Unit
Drain-Source Voltage ⁽¹⁾	V_DSS	65	V_dc
Gate-Source Voltage ⁽¹⁾	V_GS	±20	V_dc
Operating Junction Temperature	T_J	200	°C
Total Device Dissipation Above 25°C derate by	P_D	39 0.22	Watts W/°C
Storage Temperature Range	T_STG	40 to +150	°C
Thermal Resistance (TCASE = 70°C)	R_qJC	4.5	°C/W

Description

The PTF 10135 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. PTF 10135 is rated at 5 watts minimum output power. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. 100% lot traceability is standard.

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PTF 10135

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