Features: • INTERNALLY MATCHED• Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 100 Watts Min - Power Gain = 10 dB Typ• Full Gold Metallization• Excellent Thermal Stability• 100% Lot TraceabilitySpecifications Parameter Symbol Value Unit Drain-Sou...
PTF 10134: Features: • INTERNALLY MATCHED• Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 100 Watts Min - Power Gain = 10 dB Typ• Full Gold Metallization• Excellent Thermal S...
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Parameter | Symbol | Value | Unit |
Drain-Source Voltage (1) | VDSS | 65 | Vdc |
Gate-Source Voltage (1) | VGS | ±20 | Vdc |
Operating Junction Temperature | TJ | 200 | °C |
Total Device Dissipation Above 25°C derate by |
PD |
440 2.51 |
Watts W/°C |
Storage Temperature Range | TSTG | 40 to +150 | °C |
Thermal Resistance (TCASE = 70°C) | RqJC | 0.39 | °C/W |
The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. PTF 10134 is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability.