Features: • INTERNALLY MATCHED• Performance at 894 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.5 dB Typ - Efficiency = 50% Typ• Full Gold Metallization• Silicon Nitride Passivated• Excellent Thermal Stability• 100% Lot TraceabilitySpecifications ...
PTF 10133: Features: • INTERNALLY MATCHED• Performance at 894 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.5 dB Typ - Efficiency = 50% Typ• Full Gold Metallization• Silicon...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage |
VDSS |
65 |
Vdc |
Gate-Source Voltage |
VGS |
±20 |
Vdc |
Operating Junction Temperature |
TJ |
200 |
°C |
Total Device Dissipation Above 25°C derate by |
PD |
205 1.18 |
Watts W/°C |
Storage Temperature Range |
TSTG |
-40 to 150 |
°C |
Thermal Resistance (TCASE = 70°C) |
RqJC |
0.85 |
°C/W |
The PTF 10133 is an internally matched 85 watt LDMOS FET intended for cellular, GSM and D-AMPS applications. This PTF 10133 operates at 50% efficiency with 13.5 dB of gain. Full gold metallization ensures excellent device lifetime and reliability.