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PTF 10125

Features: • INTERNALLY MATCHED• Performance at 1.5 GHz, 28 V - Output Power = 135 Watts Min - Power Gain = 12.5 dB Typ• Full Gold Metallization• Silicon Nitride Passivated• Back Side Common Source• Excellent Thermal Stability• 100% Lot TraceabilitySpecific...

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PTF 10125: Features: • INTERNALLY MATCHED• Performance at 1.5 GHz, 28 V - Output Power = 135 Watts Min - Power Gain = 12.5 dB Typ• Full Gold Metallization• Silicon Nitride Passivated...

PTF 10125 Data Sheet

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Part Number:
PTF 10125
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• INTERNALLY MATCHED
• Performance at 1.5 GHz, 28 V
  - Output Power = 135 Watts Min
  - Power Gain = 12.5 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability


Specifications

Parameter

Symbol

Value

Unit

Drain-Source Voltage (1)

VDSS

65

Vdc

Gate-Source Voltage (1)

VGS

±20

Vdc

Operating Junction Temperature

TJ

200

°C

Total Device Dissipation

Above 25°C derate by

PD

400

2.51

Watts

W/°C

Storage Temperature Range

TSTG

40 to +150

°C

Thermal Resistance (TCASE = 70°C)

RqJC

0.39

°C/W




Description

The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. PTF 10125 is rated at 135 watts minimum power outpt. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.




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