PTF 10122 Selling Leads, Price trend, PTF 10122 DataSheet download, circuit diagram from SeekIC.com

Features: • INTERNALLY MATCHED• Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 50 Watts Min - Gain = 11.0 dB Typ - Efficiency = 35% Typ• Full Gold Metallization• Silicon Nitride Passivated• Back Side Common Source• Excellent Thermal Stability• 1...

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SeekIC No. : 004466872 Detail

PTF 10122: Features: • INTERNALLY MATCHED• Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 50 Watts Min - Gain = 11.0 dB Typ - Efficiency = 35% Typ• Full Gold Metallization• S...

PTF 10122 Data Sheet

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Part Number:: PTF 10122
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

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15 Days

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Upload time: 2024/11/25

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Product Details

Description

Features:

• INTERNALLY MATCHED
• Guaranteed Performance at 2.17 GHz, 28 V
- Output Power = 50 Watts Min
- Gain = 11.0 dB Typ
- Efficiency = 35% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability

Specifications

Parameter	Symbol	Value	Unit
Drain-Source Voltage ⁽¹⁾	V_DSS	65	V_dc
Gate-Source Voltage ⁽¹⁾	V_GS	±20	V_dc
Operating Junction Temperature	T_J	200	°C
Total Device Dissipation Above 25°C derate by	P_D	237 1.35	Watts W/°C
Storage Temperature Range	T_STG	40 to +150	°C
Thermal Resistance (TCASE = 70°C)	R_qJC	0.74	°C/W

Description

The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. PTF 10122 is rated at 50 watts power output, with 11 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

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PTF 10122

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