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PTF 10120

Features: • INTERNALLY MATCHED• Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 120 Watts Min - Power Gain = 11 dB Typ• Full Gold Metallization• Silicon Nitride Passivated• Back Side Common Source• Excellent Thermal Stability• 100% Lot Traceabili...

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SeekIC No. : 004466871 Detail

PTF 10120: Features: • INTERNALLY MATCHED• Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 120 Watts Min - Power Gain = 11 dB Typ• Full Gold Metallization• Silicon Nitride Pas...

PTF 10120 Data Sheet

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Part Number:
PTF 10120
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• INTERNALLY MATCHED
• Guaranteed Performance at 1.99 GHz, 28 V
   - Output Power = 120 Watts Min
   - Power Gain = 11 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability


Specifications

Parameter Symbol Value Unit
Drain-Source Voltage (1) VDSS 65 Vdc
Gate-Source Voltage (1) VGS ±20 Vdc
Operating Junction Temperature TJ 200 °C

Total Device Dissipation

Above 25°C derate by

PD

440

2.51

Watts

W/°C

Storage Temperature Range TSTG 40 to +150 °C
Thermal Resistance (TCASE = 70°C) RqJC 0.39 °C/W



Description

The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. PTF 10120 is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.




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