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PTF 10119

Features: • INTERNALLY MATCHED• Performance at 2.17 GHz, 28 Volts - Output Power = 12 Watts Min - Power Gain = 11 dB Typ - Efficiency = 43% Typ @ P-1dB• Full Gold Metallization• Silicon Nitride Passivated• Back Side Common Source• Excellent Thermal StabilityR...

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SeekIC No. : 004466870 Detail

PTF 10119: Features: • INTERNALLY MATCHED• Performance at 2.17 GHz, 28 Volts - Output Power = 12 Watts Min - Power Gain = 11 dB Typ - Efficiency = 43% Typ @ P-1dB• Full Gold MetallizationR...

PTF 10119 Data Sheet

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Part Number:
PTF 10119
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• INTERNALLY MATCHED
• Performance at 2.17 GHz, 28 Volts
  - Output Power = 12 Watts Min
  - Power Gain = 11 dB Typ
  - Efficiency = 43% Typ @ P-1dB
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% lot traceability


Specifications

Parameter Symbol Value Unit
Drain-Source Voltage (1) VDSS 65 Vdc
Gate-Source Voltage (1) VGS ±20 Vdc
Operating Junction Temperature TJ 200 °C

Total Device Dissipation

Above 25°C derate by

PD

55

0.31

Watts

W/°C

Storage Temperature Range TSTG 40 to +150 °C
Thermal Resistance (TCASE = 70°C) RqJC 3.2 °C/W



Description

The PTF 10119 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. PTF 10119 is rated at 12 watts power output. Nitride surface passivation and gold metallization ensure excellent device reliability.




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