PTF 10112 Selling Leads, Price trend, PTF 10112 DataSheet download, circuit diagram from SeekIC.com

Features: • INTERNALLY MATCHED• Guaranteed Performance at 1.93, 1.99 GHz, 28 V - Output Power = 60 Watts Min- Power Gain = 12 dB Typ• Full Gold Metallization• Silicon Nitride Passivated• Back Side Common Source• Excellent Thermal Stability• 100% Lot Tracea...

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SeekIC No. : 004466869 Detail

PTF 10112: Features: • INTERNALLY MATCHED• Guaranteed Performance at 1.93, 1.99 GHz, 28 V - Output Power = 60 Watts Min- Power Gain = 12 dB Typ• Full Gold Metallization• Silicon Nitride...

PTF 10112 Data Sheet

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Part Number:: PTF 10112
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/25

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Product Details

Description

Features:

• INTERNALLY MATCHED
• Guaranteed Performance at 1.93, 1.99 GHz,
28 V
- Output Power = 60 Watts Min
- Power Gain = 12 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability

Specifications

Parameter	Symbol	Value	Unit
Drain-Source Voltage	V_DSS	65	V_dc
Gate-Source Voltage	V_GS	±20	V_dc
Operating Junction Temperature	T_J	200	°C
Total Device Dissipation Above 25°C derate by	P_D	237 1.35	Watts W/°C
Storage Temperature Range	T_STG	40 to +150	°C
Thermal Resistance (T_CASE = 70°C)	R_qJC	0.74	°C/W

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Description

The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. PTF 10112 is rated at 60 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

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PTF 10112

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