Features: • INTERNALLY MATCHED• Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ• Full Gold Metallization• Silicon Nitride Passivated• Back Side Common Source• 100% Lot TraceabilitySpecifications P...
PTF 10036: Features: • INTERNALLY MATCHED• Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ• Full Gold Metallization• Silicon...
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Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage |
VDSS |
65 |
Vdc |
Gate-Source Voltage |
VGS |
±20 |
Vdc |
Operating Junction Temperature |
TJ |
200 |
°C |
Total Device Dissipation Above 25°C derate by |
PD |
250 1.43 |
Watts W/°C |
Storage Temperature Range |
TSTG |
-40 to 150 |
°C |
Thermal Resistance (TCASE = 70°C) |
RqJC |
0.7 |
°C/W |
The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.