Features: INTERNALLY MATCHED Performance at 2.0 GHz, 26 Volts - Output Power = 12 Watts Min - Power Gain = 12 dB Typ at 3 WattsEfficiency = 45% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot TraceabilitySpecifications Parame...
PTF 10043: Features: INTERNALLY MATCHED Performance at 2.0 GHz, 26 Volts - Output Power = 12 Watts Min - Power Gain = 12 dB Typ at 3 WattsEfficiency = 45% Typ Full Gold Metallization Silicon Nitride Passivated...
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Parameter | Symbol | Value | Unit |
Drain-Source Voltage (1) | VDSS | 65 | Vdc |
Gate-Source Voltage (1) | VGS | ±20 | Vdc |
Operating Junction Temperature | TJ | 200 | °C |
Total Device Dissipation Above 25°C derate by |
PD |
55 0.31 |
Watts W/°C |
Storage Temperature Range | TSTG | 40 to +150 | °C |
Thermal Resistance (TCASE = 70°C) | RqJC | 3.2 | °C/W |
The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, PTF 10043 operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.