PTF 10111

Features: • Performance at 1.5 GHz, 28 Volts - Output Power = 6 Watts - Efficiency = 50% Typ - Power Gain = 16 dB Typ• Full Gold Metallization• Silicon Nitride Passivated• 100% Lot TraceabilitySpecifications Parameter Symbol Value Unit Drain-Source Voltag...

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PTF 10111 Picture
SeekIC No. : 004466868 Detail

PTF 10111: Features: • Performance at 1.5 GHz, 28 Volts - Output Power = 6 Watts - Efficiency = 50% Typ - Power Gain = 16 dB Typ• Full Gold Metallization• Silicon Nitride Passivated• 10...

floor Price/Ceiling Price

Part Number:
PTF 10111
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Performance at 1.5 GHz, 28 Volts
  - Output Power = 6 Watts
  - Efficiency = 50% Typ
  - Power Gain = 16 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• 100% Lot Traceability



Specifications

Parameter

Symbol

Value

Unit

Drain-Source Voltage (1)

VDSS

65

Vdc

Gate-Source Voltage (1)

VGS

±20

Vdc

Operating Junction Temperature

TJ

200

°C

Total Device Dissipation

Above 25°C derate by

PD

36

0.208

Watts

W/°C

Storage Temperature Range

TSTG

40 to +150

°C

Thermal Resistance (TCASE = 70°C)

RqJC

4.8

°C/W




Description

The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. PTF 10111 operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.




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