Features: • Performance at 1.5 GHz, 28 Volts - Output Power = 6 Watts - Efficiency = 50% Typ - Power Gain = 16 dB Typ• Full Gold Metallization• Silicon Nitride Passivated• 100% Lot TraceabilitySpecifications Parameter Symbol Value Unit Drain-Source Voltag...
PTF 10111: Features: • Performance at 1.5 GHz, 28 Volts - Output Power = 6 Watts - Efficiency = 50% Typ - Power Gain = 16 dB Typ• Full Gold Metallization• Silicon Nitride Passivated• 10...
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Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage (1) |
VDSS |
65 |
Vdc |
Gate-Source Voltage (1) |
VGS |
±20 |
Vdc |
Operating Junction Temperature |
TJ |
200 |
°C |
Total Device Dissipation Above 25°C derate by |
PD |
36 0.208 |
Watts W/°C |
Storage Temperature Range |
TSTG |
40 to +150 |
°C |
Thermal Resistance (TCASE = 70°C) |
RqJC |
4.8 |
°C/W |
The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. PTF 10111 operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.