PTF 10107

Features: • Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min• Full Gold Metallization• Silicon Nitride Passivated• Back Side Common Source• Excellent Thermal Stability• 100% Lot TraceabilitySpecifications Parame...

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SeekIC No. : 004466867 Detail

PTF 10107: Features: • Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min• Full Gold Metallization• Silicon Nitride Passivated• Back Side Com...

floor Price/Ceiling Price

Part Number:
PTF 10107
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Guaranteed Performance at 1.99 GHz, 26 V
  - Output Power = 5 Watts Min
  - Power Gain = 11 dB Min
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability



Specifications

Parameter

Symbol

Value

Unit

Drain-Source Voltage (1)

VDSS

65

Vdc

Gate-Source Voltage (1)

VGS

±20

Vdc

Operating Junction Temperature

TJ

200

°C

Total Device Dissipation

Above 25°C derate by

PD

39

0.22

Watts

W/°C

Storage Temperature Range

TSTG

40 to +150

°C

Thermal Resistance (TCASE = 70°C)

RqJC

4.5

°C/W




Description

The PTF 10107 is a 5watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. PTF 10107 operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.




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