Features: • Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min• Full Gold Metallization• Silicon Nitride Passivated• Back Side Common Source• Excellent Thermal Stability• 100% Lot TraceabilitySpecifications Parame...
PTF 10107: Features: • Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min• Full Gold Metallization• Silicon Nitride Passivated• Back Side Com...
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Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage (1) |
VDSS |
65 |
Vdc |
Gate-Source Voltage (1) |
VGS |
±20 |
Vdc |
Operating Junction Temperature |
TJ |
200 |
°C |
Total Device Dissipation Above 25°C derate by |
PD |
39 0.22 |
Watts W/°C |
Storage Temperature Range |
TSTG |
40 to +150 |
°C |
Thermal Resistance (TCASE = 70°C) |
RqJC |
4.5 |
°C/W |
The PTF 10107 is a 5watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. PTF 10107 operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.