Features: • INTERNALLY MATCHED• Performance at 894 MHz, 28 Volts - Output Power = 165 Watts- Power Gain = 13.0 dB Typ - Drain Efficiency = 50% Typ• Full Gold Metallization• Silicon Nitride Passivated• Back Side Common Source• 100% lot traceabilitySpecifications ...
PTF 10100: Features: • INTERNALLY MATCHED• Performance at 894 MHz, 28 Volts - Output Power = 165 Watts- Power Gain = 13.0 dB Typ - Drain Efficiency = 50% Typ• Full Gold Metallization• S...
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Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage (1) |
VDSS |
65 |
Vdc |
Gate-Source Voltage (1) |
VGS |
±20 |
Vdc |
Operating Junction Temperature |
TJ |
200 |
°C |
Total Device Dissipation Above 25°C derate by |
PD |
500 2.85 |
Watts W/°C |
Storage Temperature Range |
TSTG |
40 to +150 |
°C |
Thermal Resistance (TCASE = 70°C) |
RqJC |
0.35 |
°C/W |
The PTF 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. PTF 10100 is rated at 165 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability.