PTF 10100

Features: • INTERNALLY MATCHED• Performance at 894 MHz, 28 Volts - Output Power = 165 Watts- Power Gain = 13.0 dB Typ - Drain Efficiency = 50% Typ• Full Gold Metallization• Silicon Nitride Passivated• Back Side Common Source• 100% lot traceabilitySpecifications ...

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PTF 10100 Picture
SeekIC No. : 004466866 Detail

PTF 10100: Features: • INTERNALLY MATCHED• Performance at 894 MHz, 28 Volts - Output Power = 165 Watts- Power Gain = 13.0 dB Typ - Drain Efficiency = 50% Typ• Full Gold Metallization• S...

floor Price/Ceiling Price

Part Number:
PTF 10100
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/25

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Product Details

Description



Features:

• INTERNALLY MATCHED
• Performance at 894 MHz, 28 Volts
  - Output Power = 165 Watts
  - Power Gain = 13.0 dB Typ
  - Drain Efficiency = 50% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• 100% lot traceability



Specifications

Parameter

Symbol

Value

Unit

Drain-Source Voltage (1)

VDSS

65

Vdc

Gate-Source Voltage (1)

VGS

±20

Vdc

Operating Junction Temperature

TJ

200

°C

Total Device Dissipation

Above 25°C derate by

PD

500

2.85

Watts

W/°C

Storage Temperature Range

TSTG

40 to +150

°C

Thermal Resistance (TCASE = 70°C)

RqJC

0.35

°C/W




Description

The PTF 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. PTF 10100 is rated at 165 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability.




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