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PTF 10065

Features: • INTERNALLY MATCHED• Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 30 Watts Min - Power Gain = 11.0 dB Typ• Full Gold Metallization• Silicon Nitride Passivated• Excellent Thermal Stability• 100% Lot TraceabilitySpecifications Paramete...

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PTF 10065: Features: • INTERNALLY MATCHED• Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 30 Watts Min - Power Gain = 11.0 dB Typ• Full Gold Metallization• Silicon Nitride Pa...

PTF 10065 Data Sheet

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Part Number:
PTF 10065
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• INTERNALLY MATCHED
• Guaranteed Performance at 1.99 GHz, 28 V
   - Output Power = 30 Watts Min
   - Power Gain = 11.0 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• 100% Lot Traceability


Specifications

Parameter

Symbol

Value

Unit

Drain-Source Voltage (1)

VDSS

65

Vdc

Gate-Source Voltage (1)

VGS

±20

Vdc

Operating Junction Temperature

TJ

200

°C

Total Device Dissipation

Above 25°C derate by

PD

120

0.7

Watts

W/°C

Storage Temperature Range

TSTG

40 to +150

°C

Thermal Resistance (TCASE = 70°C)

RqJC

1.4

°C/W




Description

The PTF 10065 is a 30watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. PTF 10065 typically operates with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.




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