Features: • Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 12 Watts Min - Power Gain = 12 dB Typ• Full Gold Metallization• Silicon Nitride Passivated• Back Side Common Source• Excellent Thermal Stability• 100% Lot TraceabilitySpecifications Param...
PTF 10053: Features: • Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 12 Watts Min - Power Gain = 12 dB Typ• Full Gold Metallization• Silicon Nitride Passivated• Back Side Co...
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Parameter | Symbol | Value | Unit |
Drain-Source Voltage (1) | VDSS | 65 | Vdc |
Gate-Source Voltage (1) | VGS | ±20 | Vdc |
Operating Junction Temperature | TJ | 200 | °C |
Total Device Dissipation Above 25°C derate by |
PD |
58 0.33 |
Watts W/°C |
Storage Temperature Range | TSTG | 40 to +150 | °C |
Thermal Resistance (TCASE = 70°C) | RqJC | 3.0 | °C/W |
The PTF 10053 is a 12watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. PTF 10053 operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.