PTF 10052

Features: • Performance at 960 MHz, 28 Volts - Output Power = 35 Watts - Power Gain = 13.5 dB Typ - Efficiency = 55% Typ• Full Gold Metallization• Silicon Nitride Passivated• Back Side Common Source• 100% Lot Traceability• Available in Package 20222 as PTF 10007...

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PTF 10052 Picture
SeekIC No. : 004466863 Detail

PTF 10052: Features: • Performance at 960 MHz, 28 Volts - Output Power = 35 Watts - Power Gain = 13.5 dB Typ - Efficiency = 55% Typ• Full Gold Metallization• Silicon Nitride Passivated•...

floor Price/Ceiling Price

Part Number:
PTF 10052
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

Rating

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Performance at 960 MHz, 28 Volts
  - Output Power = 35 Watts
  - Power Gain = 13.5 dB Typ
  - Efficiency = 55% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• 100% Lot Traceability
• Available in Package 20222 as PTF 10007



Specifications

Parameter

Symbol

Value

Unit

Drain-Source Voltage (1)

VDSS

60

Vdc

Gate-Source Voltage (1)

VGS

±20

Vdc

Operating Junction Temperature

TJ

200

°C

Total Device Dissipation

Above 25°C derate by

PD

120

0.7

Watts

W/°C

Storage Temperature Range

TSTG

40 to +150

°C

Thermal Resistance (TCASE = 70°C)

RqJC

1.4

°C/W




Description

The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. PTF 10052 operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.




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