Features: INTERNALLY MATCHED Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 30 Watts Min - Gain = 10.5 dB Typ at 30 Watts Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot TraceabilitySpecifications Parameter Symbol Value Unit Dra...
PTF 10048: Features: INTERNALLY MATCHED Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 30 Watts Min - Gain = 10.5 dB Typ at 30 Watts Full Gold Metallization Silicon Nitride Passivated Excellent Ther...
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Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage (1) |
VDSS |
65 |
Vdc |
Gate-Source Voltage (1) |
VGS |
±20 |
Vdc |
Operating Junction Temperature |
TJ |
200 |
°C |
Total Device Dissipation Above 25°C derate by |
PD |
120 0.66 |
Watts W/°C |
Storage Temperature Range |
TSTG |
40 to +150 |
°C |
Thermal Resistance (TCASE = 70°C) |
RqJC |
1.5 |
°C/W |
The PTF 10048 is an internally matched 30watt GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. PTF 10048 operates at 40% efficiency with 10.5 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.