PTF211802

Features: • Broadband internal matching• Typical twocarrier WCDMA performance - Average output power = 38 W - Gain = 15 dB- Efficiency = 25%- IM3 = 37 dBc - ACPR < 42 dBc• Typical CW performance - Output power at P1dB = 180 W - Efficiency = 50%• Integrated ESD protection...

product image

PTF211802 Picture
SeekIC No. : 004466902 Detail

PTF211802: Features: • Broadband internal matching• Typical twocarrier WCDMA performance - Average output power = 38 W - Gain = 15 dB- Efficiency = 25%- IM3 = 37 dBc - ACPR < 42 dBc• Typic...

floor Price/Ceiling Price

Part Number:
PTF211802
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Broadband internal matching
• Typical twocarrier WCDMA performance
  - Average output power = 38 W
  - Gain = 15 dB
  - Efficiency = 25%
  - IM3 = 37 dBc
  - ACPR < 42 dBc
• Typical CW performance
  - Output power at P1dB = 180 W
  - Efficiency = 50%
• Integrated ESD protection: Human Body
  Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
   180 W (CW) output power



Specifications

Parameter   Symbol Value Unit
Drain-Source Voltage   VDSS 65 Vdc
Gate-Source Voltage   VGS 0.5 to +12 Vdc
Operating Junction Temperature   TJ 200 °C

Total Device Dissipation

Above 25°C derate by

PTF211802A PD

498

2.85

Watts

W/°C

Total Device Dissipation

Above 25°C derate by

PTF211802E PD

647

3.70

Watts

W/°C

Storage Temperature Range   TSTG 40 to +150 °C
Thermal Resistance (TCASE = 70°C, 130 W CW)

PTF211802A

PTF211802E

RqJC

RqJC

0.35

0.27

°C/W

°C/W




Description

The PTF211802 is a 180 W, internally matched, laterally doublediffused, GOLDMOS pushpull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Audio Products
Inductors, Coils, Chokes
Soldering, Desoldering, Rework Products
Undefined Category
Isolators
Circuit Protection
View more