Features: • Broadband internal matching• Typical twocarrier WCDMA performance - Average output power = 38 W - Gain = 15 dB- Efficiency = 25%- IM3 = 37 dBc - ACPR < 42 dBc• Typical CW performance - Output power at P1dB = 180 W - Efficiency = 50%• Integrated ESD protection...
PTF211802: Features: • Broadband internal matching• Typical twocarrier WCDMA performance - Average output power = 38 W - Gain = 15 dB- Efficiency = 25%- IM3 = 37 dBc - ACPR < 42 dBc• Typic...
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Parameter | Symbol | Value | Unit | |
Drain-Source Voltage | VDSS | 65 | Vdc | |
Gate-Source Voltage | VGS | 0.5 to +12 | Vdc | |
Operating Junction Temperature | TJ | 200 | °C | |
Total Device Dissipation Above 25°C derate by |
PTF211802A | PD |
498 2.85 |
Watts W/°C |
Total Device Dissipation Above 25°C derate by |
PTF211802E | PD |
647 3.70 |
Watts W/°C |
Storage Temperature Range | TSTG | 40 to +150 | °C | |
Thermal Resistance (TCASE = 70°C, 130 W CW) |
PTF211802A PTF211802E |
RqJC RqJC |
0.35 0.27 |
°C/W °C/W |
The PTF211802 is a 180 W, internally matched, laterally doublediffused, GOLDMOS pushpull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.