Features: • Internal matching for wideband performance• Typical twocarrier WCDMA performance- Average output power = 11.5 W - Gain = 14 dB - Efficiency = 27%- IM3 = 37 dBc• Typical CW performance - Output power at P1dB = 50 W - Linear gain = 14 dB - Efficiency = 53%• Integr...
PTF210451: Features: • Internal matching for wideband performance• Typical twocarrier WCDMA performance- Average output power = 11.5 W - Gain = 14 dB - Efficiency = 27%- IM3 = 37 dBc• Typical...
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Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage |
VDSS |
65 |
Vdc |
Gate-Source Voltage |
VGS |
0.5 to +12 |
Vdc |
Operating Junction Temperature |
TJ |
200 |
°C |
Total Device Dissipation Above 25°C derate by |
PD |
175 1.0 |
Watts W/°C |
Storage Temperature Range |
TSTG |
40 to +150 |
°C |
Thermal Resistance (TCASE = 70°C, 45 W CW) |
RqJC |
1.0 |
°C/W |
The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.