PTF210301

Features: • Broadband internal matching• Typical twocarrier WCDMA performance - Average output power = 7.0 W - Gain = 16 dB - Efficiency = 25% - IM3 = 37 dBc• Typical CW performance - Output power at P1dB = 36 W - Gain = 15 dB - Efficiency = 53%• Integrated ESD protection: ...

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PTF210301 Picture
SeekIC No. : 004466898 Detail

PTF210301: Features: • Broadband internal matching• Typical twocarrier WCDMA performance - Average output power = 7.0 W - Gain = 16 dB - Efficiency = 25% - IM3 = 37 dBc• Typical CW performanc...

floor Price/Ceiling Price

Part Number:
PTF210301
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Broadband internal matching
• Typical twocarrier WCDMA performance
  - Average output power = 7.0 W
  - Gain = 16 dB
  - Efficiency = 25%
  - IM3 = 37 dBc
• Typical CW performance
  - Output power at P1dB = 36 W
  - Gain = 15 dB
  - Efficiency = 53%
• Integrated ESD protection: Human Body
   Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
  30 W (CW) output power



Specifications

</ta
Parameter   Symbol Value Unit
Drain-Source Voltage   VDSS 65 Vdc
Gate-Source Voltage   VGS 0.5 to +12 Vdc
Operating Junction Temperature   TJ 200 °C

Total Device Dissipation

Above 25°C derate by

PTF211802A PD

116

0.67

Watts

W/°C

Total Device Dissipation

Above 25°C derate by

PTF211802E PD

145

0.83

Watts

W/°C

Storage Temperature Range   TSTG 40 to +150 °C
Thermal Resistance (TCASE = 70°C, 130 W CW)

PTF211802A

PTF211802E

RqJC

RqJC

1.5

1.2

°C/W

°C/W




Description

The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.




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