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PTF211301

Features: • Broadband internal matching• Typical twocarrier WCDMA performance at 2140 MHz - Average output power = 28 W - Linear Gain = 13.5 dB - Efficiency = 25% - Intermodulation distortion = 37 dBc - Adjacent channel power = 42 dBc• Typical CW performance, 2170 MHz, 28 V - Out...

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PTF211301: Features: • Broadband internal matching• Typical twocarrier WCDMA performance at 2140 MHz - Average output power = 28 W - Linear Gain = 13.5 dB - Efficiency = 25% - Intermodulation disto...

PTF211301 Data Sheet

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Part Number:
PTF211301
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Broadband internal matching
• Typical twocarrier WCDMA performance at
   2140 MHz
   - Average output power = 28 W
   - Linear Gain = 13.5 dB
   - Efficiency = 25%
   - Intermodulation distortion = 37 dBc
   - Adjacent channel power = 42 dBc
• Typical CW performance, 2170 MHz, 28 V
  - Output power at P1dB = 148 W
  - Efficiency = 50%
• Integrated ESD protection: Human Body
   Model, Class 1 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
  130 W (CW) output power


Specifications

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

65

Vdc

Gate-Source Voltage

VGS

0.5 to +12

Vdc

Operating Junction Temperature

TJ

200

°C

Total Device Dissipation

Above 25°C derate by

PD

350

2.0

Watts

W/°C

Storage Temperature Range

TSTG

40 to +150

°C

Thermal Resistance (TCASE = 70°C, 130 W CW)

RqJC

0.50

°C/W




Description

The PTF211301 is a 130W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single and twocarrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.




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