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PTF210901

Features: • Internal matching for wideband performance• Typical twocarrier 3GPP WCDMA performance - Average output power = 19 W at 37 dBc - Efficiency = 25%• Typical CW performance - Output power at P1dB = 105 W - Gain = 15 dB - Efficiency = 53%• Integrated ESD protection: ...

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SeekIC No. : 004466900 Detail

PTF210901: Features: • Internal matching for wideband performance• Typical twocarrier 3GPP WCDMA performance - Average output power = 19 W at 37 dBc - Efficiency = 25%• Typical CW performance...

PTF210901 Data Sheet

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Part Number:
PTF210901
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Internal matching for wideband performance
• Typical twocarrier 3GPP WCDMA
  performance
  - Average output power = 19 W at 37 dBc
  - Efficiency = 25%
• Typical CW performance
  - Output power at P1dB = 105 W
  - Gain = 15 dB
  - Efficiency = 53%
• Integrated ESD protection: Human Body Model,
  Class 1 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR at 28 V,
  90 W (CW) output power


Specifications

</TABL
Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

65

Vdc

Gate-Source Voltage

VGS

0.5 to +12

Vdc

Operating Junction Temperature

TJ

200

°C

Total Device Dissipation

Above 25°C derate by

PD

389

2.22

Watts

W/°C

Storage Temperature Range

TSTG

40 to +150

°C

Thermal Resistance (TCASE = 70°C, 90 W CW)

RqJC

0.45

°C/W




Description

The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.




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