PSMN9R0-30YL,115, US $ .23-.36 , NXP Semiconductors, PSMN9R0-30YL,115 DataSheet download, circuit diagram from SeekIC.com

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PSMN9R0-30YL,115: MOSFET

PSMN9R0-30YL,115 Data Sheet

US $ .23~.36 / Piece | Get Latest Price

Part Number:: PSMN9R0-30YL,115
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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25~100
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$.36
$.32
$.27
$.23

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Upload time: 2024/11/20

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Recent History
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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	61 A
Resistance Drain-Source RDS (on) :	9 mOhms	Configuration :	Single Triple Source
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-669 (LFPAK)	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Configuration : Single Triple Source
Resistance Drain-Source RDS (on) : 9 mOhms
Continuous Drain Current : 61 A
Package / Case : SOT-669 (LFPAK)

Parameters:

Technical/Catalog Information	PSMN9R0-30YL,115
Vendor	NXP Semiconductors (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	55A
Rds On (Max) @ Id, Vgs	8 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	1006pF @ 12V
Power - Max	46W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	17.8nC @ 10V
Package / Case	LFPAK
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PSMN9R0 30YL,115 PSMN9R030YL,115 568 4687 6 ND 56846876ND 568-4687-6

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PSMN9R0-30YL,115

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