PSMN002-25B

Features: ·Low on-state resistance·Fast switching.Application· High frequency computer motherboard DC to DC converters· OR-ing applications.Specifications SYMBOL PARAMETER CONDITIONS Min Max UNIT VDS drain-source voltage (DC) Tj = 25 to 175 - 25 V VDGR D...

product image

PSMN002-25B Picture
SeekIC No. : 004465875 Detail

PSMN002-25B: Features: ·Low on-state resistance·Fast switching.Application· High frequency computer motherboard DC to DC converters· OR-ing applications.Specifications SYMBOL PARAMETER CONDITIONS ...

floor Price/Ceiling Price

Part Number:
PSMN002-25B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Low on-state resistance
·Fast switching.



Application

· High frequency computer motherboard DC to DC converters
· OR-ing applications.



Specifications

SYMBOL
PARAMETER
CONDITIONS
Min
Max
UNIT
VDS
drain-source voltage (DC) Tj = 25 to 175
-
25
V
VDGR
Drain-gate voltage(DC) Tj= 25 to 175; RGS = 20 k
-
25
V
VGS
gate-source voltage (DC)  
-
±15
V
  VGSM gate-source voltage tp 50 s; pulsed;
duty cycle 25 %; Tj 150
-
±20
V
ID
drain current (DC) Tmb = 25; VGS = 5 V; Figure 2 and 3
-
75
A
Tmb = 100; VGS = 5 V; Figure 2
-
75
A
IDM
peak drain current Tmb = 25; pulsed; tp 10 s; Figure 3
-
400
A
Ptot
total power dissipation Tmb = 25; Figure 1
-
230
W
Tstg
storage temperature  
-55
+175
Tj
operating junction temperature  
-55
+75
Source-drain diode
IS
source (diode forward) current (DC) Tmb = 25
-
75
A
ISM
peak source (diode forward)
current
Tmb = 25; pulsed; tp 10 s
-
400
A
Avalanche ruggedness
EAS
non-repetitive avalanche energy unclamped inductive load;
ID = 75 A; tp = 0.1 ms; VDD = 15 V;
RGS = 50; VGS = 5 V; starting Tj = 25
-
500
mJ
IAS
non-repetitive avalanche current unclamped inductive load;
VDD = 15 V; RGS = 50; VGS = 5 V;
starting Tj = 25
-
75
A








Description

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology.

Product availability:
PSMN002-25P in SOT78 (TO-220AB)
PSMN002-25B in SOT404 (D2-PAK)


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Fans, Thermal Management
Discrete Semiconductor Products
Crystals and Oscillators
Resistors
View more