Features: ·Low on-state resistance·Fast switching.Application· High frequency computer motherboard DC to DC converters· OR-ing applications.Specifications SYMBOL PARAMETER CONDITIONS Min Max UNIT VDS drain-source voltage (DC) Tj = 25 to 175 - 25 V VDGR D...
PSMN002-25P: Features: ·Low on-state resistance·Fast switching.Application· High frequency computer motherboard DC to DC converters· OR-ing applications.Specifications SYMBOL PARAMETER CONDITIONS ...
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Features: ·Low on-state resistance·Fast switching.Application· High frequency computer motherboard...
Features: • 'Trench' technology• Very low on-state resistance• Fast switching...
SYMBOL |
PARAMETER |
CONDITIONS |
Min |
Max |
UNIT |
VDS |
drain-source voltage (DC) | Tj = 25 to 175 |
- |
25 |
V |
VDGR |
Drain-gate voltage(DC) | Tj= 25 to 175; RGS = 20 k |
- |
25 |
V |
VGS |
gate-source voltage (DC) |
- |
±15 |
V | |
VGSM | gate-source voltage | tp 50 s; pulsed; duty cycle 25 %; Tj 150 |
- |
±20 |
V |
ID |
drain current (DC) | Tmb = 25; VGS = 5 V; Figure 2 and 3 |
- |
75 |
A |
Tmb = 100; VGS = 5 V; Figure 2 |
- |
75 |
A | ||
IDM |
peak drain current | Tmb = 25; pulsed; tp 10 s; Figure 3 |
- |
400 |
A |
Ptot |
total power dissipation | Tmb = 25; Figure 1 |
- |
230 |
W |
Tstg |
storage temperature |
-55 |
+175 |
||
Tj |
operating junction temperature |
-55 |
+75 |
||
Source-drain diode | |||||
IS |
source (diode forward) current (DC) | Tmb = 25 |
- |
75 |
A |
ISM |
peak source (diode forward) current |
Tmb = 25; pulsed; tp 10 s |
- |
400 |
A |
Avalanche ruggedness | |||||
EAS |
non-repetitive avalanche energy | unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDD = 15 V; RGS = 50; VGS = 5 V; starting Tj = 25 |
- |
500 |
mJ |
IAS |
non-repetitive avalanche current | unclamped inductive load; VDD = 15 V; RGS = 50; VGS = 5 V; starting Tj = 25 |
- |
75 |
A |