PSMN2R5-30YL,115, US $ .43-.62 , NXP Semiconductors, PSMN2R5-30YL,115 DataSheet download, circuit diagram from SeekIC.com

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PSMN2R5-30YL,115: MOSFET

PSMN2R5-30YL,115 Data Sheet

US $ .43~.62 / Piece | Get Latest Price

Part Number:: PSMN2R5-30YL,115
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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Upload time: 2024/5/27

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Recent History
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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	100 A
Resistance Drain-Source RDS (on) :	2.5 mOhms	Configuration :	Single Triple Source
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-669 (LFPAK)	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 2.5 mOhms
Configuration : Single Triple Source
Package / Case : SOT-669 (LFPAK)

Parameters:

Technical/Catalog Information	PSMN2R5-30YL,115
Vendor	NXP Semiconductors (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	100A
Rds On (Max) @ Id, Vgs	2.4 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	3468pF @ 12V
Power - Max	88W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	57nC @ 10V
Package / Case	LFPAK
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PSMN2R5 30YL,115 PSMN2R530YL,115 568 4680 1 ND 56846801ND 568-4680-1

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PSMN2R5-30YL,115

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