MOSFET
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Features: ·Low on-state resistance·Fast switching.Application· High frequency computer motherboard...
Features: ·Low on-state resistance·Fast switching.Application· High frequency computer motherboard...
Features: • 'Trench' technology• Very low on-state resistance• Fast switching...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 100 A | ||
Resistance Drain-Source RDS (on) : | 2 mOhms | Configuration : | Single Triple Source | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-669 (LFPAK) | Packaging : | Reel |
Technical/Catalog Information | PSMN2R0-30YL,115 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 100A |
Rds On (Max) @ Id, Vgs | 2 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 3980pF @ 12V |
Power - Max | 97W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 64nC @ 10V |
Package / Case | LFPAK |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PSMN2R0 30YL,115 PSMN2R030YL,115 568 4679 2 ND 56846792ND 568-4679-2 |