MOSFET N-CH TRENCH 200V 20A
PSMN130-200D,118: MOSFET N-CH TRENCH 200V 20A
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Features: ·Low on-state resistance·Fast switching.Application· High frequency computer motherboard...
Features: ·Low on-state resistance·Fast switching.Application· High frequency computer motherboard...
Features: • 'Trench' technology• Very low on-state resistance• Fast switching...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 20 A | ||
Resistance Drain-Source RDS (on) : | 0.13 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-428 | Packaging : | Reel |
Technical/Catalog Information | PSMN130-200D,118 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 20A |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 25A, 10V |
Input Capacitance (Ciss) @ Vds | 2470pF @ 25V |
Power - Max | 150W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 65nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Drawing Number | 568; SOT428; ; 3 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PSMN130 200D,118 PSMN130200D,118 |