PSMN102-200Y,115, US $ .9-1.26 , NXP Semiconductors, PSMN102-200Y,115 DataSheet download, circuit diagram from SeekIC.com

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PSMN102-200Y,115: MOSFET Trans MOSFET N-CH 200V 21.5A 5-Pin

PSMN102-200Y,115 Data Sheet

US $ .9~1.26 / Piece | Get Latest Price

Part Number:: PSMN102-200Y,115
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	- 200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	21.5 A
Resistance Drain-Source RDS (on) :	0.102 Ohms	Configuration :	Single Triple Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	LFPAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : LFPAK
Maximum Operating Temperature : + 150 C
Configuration : Single Triple Source
Continuous Drain Current : 21.5 A
Drain-Source Breakdown Voltage : - 200 V
Resistance Drain-Source RDS (on) : 0.102 Ohms

Parameters:

Technical/Catalog Information	PSMN102-200Y,115
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	21.5A
Rds On (Max) @ Id, Vgs	102 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	1568pF @ 30V
Power - Max	113W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	30.7nC @ 10V
Package / Case	LFPAK
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PSMN102 200Y,115 PSMN102200Y,115

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PSMN102-200Y,115

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