PSMN040-200W,127 Selling Leads, Price trend , NXP Semiconductors, PSMN040-200W,127 DataSheet download, circuit diagram from SeekIC.com

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PSMN040-200W,127: MOSFET RAIL PWR-MOS

PSMN040-200W,127 Data Sheet

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Part Number:: PSMN040-200W,127
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	50 A
Resistance Drain-Source RDS (on) :	0.04 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-247	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.04 Ohms

Parameters:

Technical/Catalog Information	PSMN040-200W,127
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	40 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	9530pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	183nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Drawing Number	568; SOT429; ; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PSMN040 200W,127 PSMN040200W,127

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PSMN040-200W,127

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