PSMN035-150P

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 150 V
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.035 Ohms


Features:

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance


Application

• d.c. to d.c. converters
• switched mode power supplies

The PSMN035-150P is supplied in the SOT78 (TO220AB) conventional leaded package.
The PSMN035-150B is supplied in the SOT404 surface mounting package.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDSS	Drain-source voltage	Tj = 25 to 175	-	150	V
VDGR	Drain-gate voltage	Tj = 25 to 175; RGS = 20 k	-	150	V
VGS	Gate-source voltage		-	± 20	V
ID	Continuous drain current	Tmb = 25	-	50	A
		Tmb = 100	-	36	A
IDM	Pulsed drain current	Tmb = 25	-	200	A
PD	Total power dissipation	Tmb = 25	-	250	W
Tj, Tstg	Operating junction andstorage temperature		-55	175

Description

SiliconMAX products PSMN035-150P use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.