PSMN020-150W

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 150 V
Package / Case : TO-247
Configuration : Single Dual Drain
Continuous Drain Current : 73 A
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.02 Ohms


Features:

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance


Application

• d.c. to d.c. converters
• switched mode power supplies

The PSMN020-150W is supplied in the SOT429 (TO247) conventional leaded package.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDSS	Drain-source voltage	Tj = 25 to 175	-	150	V
VDGR	Drain-gate voltage	Tj = 25 to 175; RGS = 20 k	-	150	V
VGS	Gate-source voltage		-	± 20	V
ID	Continuous drain current	Tmb = 25 ; VGS = 10 V	-	73	A
		Tmb = 100; VGS = 10 V	-	51	A
IDM	Pulsed drain current	Tmb = 25	-	290	A
PD	Total power dissipation	Tmb = 25	-	300	W
Tj, Tstg	Operating junction andstorage temperature		-55	175

Description

SiliconMAX products PSMN020-150W use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating.