Position: Home  > All Categories> Integrated Circuits (ICs) > PSMN015-110P

PSMN015-110P

MOSFET RAIL PWR-MOS

product image

PSMN015-110P Picture
See larger image
SeekIC No. : 00163943 Detail

PSMN015-110P: MOSFET RAIL PWR-MOS

PSMN015-110P Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PSMN015-110P
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 110 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0405 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Rail    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Continuous Drain Current : 75 A
Packaging : Rail
Drain-Source Breakdown Voltage : 110 V
Resistance Drain-Source RDS (on) : 0.0405 Ohms


Features:

· Low on-state resistance
· Low gate charge.


Application

· DC-to-DC converters
· Switched-mode power supplies.


Pinout

Connection Diagram


Specifications

SYMBOL
 PARAMETER CONDITIONS
MIN.
MAX.
UNIT
VDS
 drain-source voltage (DC) 25 Tj 175
-
110
V
VDGR
 drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k
-
100
V
VGS
 gate-source voltage (DC)
-
± 20
V
ID
 drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3
-
75
A
Tmb = 100 ; VGS = 10 V; Figure 2
-
60.8
A
IDM
 peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3
-
240
A
Ptot
 total power dissipation Tmb = 25 ; Figure 1
-
300
W
Tstg
 storage temperature  
-55
+175
Tj
 junction temperature  
-55
+175
Source-drain diode
IS
 source (diode forward) current (DC) Tmb = 25
-
75
A
ISM
 peak source (diode forward) current Tmb = 25 ; pulsed; tp 10s
-
240
A
Avalanche ruggedness
EDS(AL)S
 non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 36 A;
tp = 0.11 ms; VDD 50 V; RGS = 50;
VGS = 10 V; starting Tj = 25
-
320
mJ



Description

SiliconMAX™ products PSMN015-110P use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Filters
PICO2205A
PICO2204A
Undefined Category
VI-B63-IU
X27 589
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
View more