PSMN009-100W,127

MOSFET RAIL PWR-MOS

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PSMN009-100W,127 Picture
SeekIC No. : 00162525 Detail

PSMN009-100W,127: MOSFET RAIL PWR-MOS

floor Price/Ceiling Price

Part Number:
PSMN009-100W,127
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 0.009 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 100 A
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.009 Ohms


Parameters:

Technical/Catalog InformationPSMN009-100W,127
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs9 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 9000pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs214nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Drawing Number568; SOT429; ; 3
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PSMN009 100W,127
PSMN009100W,127



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